0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2 . 4 + 0 . 1 - 0 . 1 1 . 3 + 0 . 1 - 0 . 1 0 - 0 . 1 0 . 3 8 + 0 . 1 - 0 . 1 0 . 9 7 + 0 . 1 - 0 . 1 0 . 5 5 0 . 4 1.base 2.emitter 3.collector 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 c817 -25 features for gener al af applications. high collec tor current. high current gain. low c ollector-em itt er saturation voltage com plem entary types: absolute maxim um rating s t a = 2 5 paramet er sym bol rating unit collector-ba se voltage v cbo 50 v collector-emit ter voltage v ceo 45 v em itt er- base voltage v ebo 5 v collector current (dc ) i c 500 m a peak c ollector c urr ent i cm 1 a pow er dissi pation p d 300 m w junct ion tem pera ture t j 150 storage tem pera ture t stg -55 to +150 ele ctric al characteristics t a = 2 5 sym bol test c onditions min typ ma x unit collector-to-b ase breakdow n voltage v (br)cbo i c = 10 a, i e = 0 50 v collector-to-e m itt er bre akdow n voltage v (br)ceo i c = 10 m a, i b = 0 45 v v (br)ebo i e = 10 a, i c = 0 5 v collector cutof f c urre nt i cbo v cb = 45 v , i e = 0 100 na i ebo v eb =5 v , i c = 0 100 na v ce = 1 v ,i c = 100 m a 160 400 v ce = 1 v ,i c = 500 m a 40 v ce(sat) i c = 500 m a, i b = 50 m a 0.7 v v be(sat) i c = 500 m a, i b = 50 m a 1.2 v c ob v cb = 10 v , f = 1 mhz 10 pf f t i c =10 m a, v ce = 5 v , f = 100 mhz 100 mh z * puls ed: pw 350 s , duty c ycle 2% base t o em itt er vo ltage * collector-ba se c apacitance transition frequency h fe collector saturation voltage * paramet er em itt er cutoff c urre nt em itt er-to- base breakdow n voltage dc curre nt gain * mark ing mar king 6bw k kc807 (pnp) 1 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
|
